INTERFACE STUDY IN EPITAXIAL VAPOUR GROWN GAAS

[1] THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 932 - &

[2] BOUCHER A, TO BE PUBLISHED

[3] COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445

[4] EASTON BE, PRIVATE COMMUNICATIO

[5] FABRE E, 1970, CR ACAD SCI B PHYS, V270, P848

[6] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[7] DEVELOPMENT OF A METHOD IN X-RAY REFLEXION TOPOGRAPHY [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1969, 2 : 223 - &

[8] SCHILLER C, 1969 M IEE MUN

[1] THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 932 - &

[2] BOUCHER A, TO BE PUBLISHED

[3] COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445

[4] EASTON BE, PRIVATE COMMUNICATIO

[5] FABRE E, 1970, CR ACAD SCI B PHYS, V270, P848

[6] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[7] DEVELOPMENT OF A METHOD IN X-RAY REFLEXION TOPOGRAPHY [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1969, 2 : 223 - &

[8] SCHILLER C, 1969 M IEE MUN