PHOTOLUMINESCENCE STUDIES OF RELAXATION PROCESSES IN STRAINED SI1-XGEX/SI EPILAYERS

被引：11

作者：

KVEDER, VV ^{[1
]}

STEINMAN, EA ^{[1
]}

GRIMMEISS, HG ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.360625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relaxation behavior of Si1-xGex/Si(001) strained layers has been studied during annealing in the temperature range 400-900°C. Taking into account that the relaxation is mainly caused by nucleation and propagation of dislocations, the dislocation related luminescence has been used to characterize the relaxation process. It is shown that in highly stressed layers dislocations with nonequilibrium dissociation width are generated. Our data are in good agreement with previous transmission electron microscopy results. © 1995 American Institute of Physics.

引用

页码：446 / 450

页数：5

共 28 条

[1] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].

DODSON, BW ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327

[3]

DROZDOV NA, 1976, JETP LETT+, V23, P597

[4] EXCITONIC PHOTOLUMINESCENCE FROM SI-CAPPED STRAINED SI1-XGEX LAYERS [J].

DUTARTRE, D ;

BREMOND, G ;

SOUIFI, A ;

BENYATTOU, T .

PHYSICAL REVIEW B, 1991, 44 (20) :11525-11527

[5] OBSERVATION OF LOMER-COTTRELL LOCKS IN SIGE STRAINED LAYERS [J].

FERRET, P ;

ROBINSON, BJ ;

THOMPSON, DA ;

BARIBEAU, JM .

APPLIED PHYSICS LETTERS, 1990, 57 (21) :2220-2221

[6] CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY OF DISLOCATIONS IN SI AND SI1-XGEX ALLOYS [J].

HIGGS, V ;

LIGHTOWLERS, EC ;

TAJBAKHSH, S ;

WRIGHT, PJ .

APPLIED PHYSICS LETTERS, 1992, 61 (09) :1087-1089

[7] CHARACTERIZATION OF EPITAXIAL AND OXIDATION-INDUCED STACKING-FAULTS IN SILICON - THE INFLUENCE OF TRANSITION-METAL CONTAMINATION [J].

HIGGS, V ;

GOULDING, M ;

BRINKLOW, A ;

KIGHTLEY, P .

APPLIED PHYSICS LETTERS, 1992, 60 (11) :1369-1371

[8]

HIGGS V, 1993, SOLID STATE PHENOM, V32, P291

[9]

HIGGS V, 1993, J APPL PHYS, V77, P1952

[10]

HULL R, 1993, SOLID STATE PHENOM, V32, P417

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