RAMAN-SCATTERING FROM ALGAINP

被引：34

作者：

KONDOW, M

MINAGAWA, S

SATOH, S

机构：

来源：

关键词：

D O I：

10.1063/1.98273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2001 / 2003

页数：3

共 16 条

[1] TUNNEL MECHANISMS AND JUNCTION CHARACTERIZATION IN III-V TUNNEL-DIODES
ANDREWS, AM
DUKE, CB
KLEIMAN, GG
KORB, HW
HOLONYAK, N
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (06): : 2273 - +
[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS
ASAHI, H
KAWAMURA, Y
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4928 - 4931
[3] Bairamov B. Kh., 1981, Soviet Physics - Solid State, V23, P13
[4] OPTICAL STUDIES OF VIBRATIONAL PROPERTIES OF DISORDERED SOLIDS
BARKER, AS
SIEVERS, AJ
[J]. REVIEWS OF MODERN PHYSICS, 1975, 47 : S1 - S179
[5] RAMAN DETECTION OF PHONON-PHONON COUPLING IN GAXIN1-XP
BESERMAN, R
HIRLIMANN, C
BALKANSKI, M
CHEVALLIER, J
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (05) : 485 - 488
[6] RAMAN-SCATTERING IN INP1-XASX ALLOYS
CARLES, R
SAINTCRICQ, N
RENUCCI, JB
NICHOLAS, RJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (05): : 899 - 910
[7] LATTICE VIBRATION SPECTRA OF GAASXP1-X SINGLE CRYSTALS
CHEN, YS
SHOCKLEY, W
PEARSON, GL
[J]. PHYSICAL REVIEW, 1966, 151 (02): : 648 - +
[8] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
KOBAYASHI, K
KAWATA, S
HINO, I
SUZUKI, T
YUASA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
[9] IKEDA M, 1984, J CRYST GROWTH, V77, P380
[10] LONG-WAVELENGTH LATTICE-DYNAMICS OF IN1-XGAXASYP1-Y ALLOYS
INOSHITA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (07) : 2056 - 2064