SEMI-INSULATING TRANSITION METAL-DOPED III-V MATERIALS

被引:8
作者
HENNEL, AM
机构
关键词
D O I
10.12693/APhysPolA.79.15
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This review surveys the properties of transition metal (TM) doped seminsulating (SI) III-V semiconductors. After a general definition of a SI material, a simple model of a SI crystal with a midgap donor and shallow impurities is discussed. A short history, main properties, and thermal stability problems of SI Cr-doped GaAs are presented. The puzzling problem of SI V-doped GaAs is explained. Several dopants (Cr, Fe, Co, and Ti) in SI InP are discussed in terms of the resistivities obtained, as well as thermal stability. Finally, GaP and GaInAs high resistivity systems are considered.
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页码:15 / 29
页数:15
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