1ST OBSERVATION OF A TITANIUM MIDGAP DONOR LEVEL IN IN0.53GA0.47AS P-N DIODES

被引：4

作者：

CHEN, Z

KORB, W

BAUER, RK

BIMBERG, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 07期

关键词：

D O I：

10.1063/1.101810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：645 / 647

页数：3

共 23 条

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[3]

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[4]

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[5]

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[8] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].

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[9] OPTICAL AND ELECTRICAL CHARACTERIZATION OF HIGH-RESISTIVITY LIQUID-PHASE-EPITAXIAL IN0.53GA0.47AS-FE [J].

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[10] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J].

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