ELECTRONIC AND OPTICAL-PROPERTIES OF TI-DOPED GAAS AND INP - SEMI-INSULATING INP

被引：29

作者：

BRANDT, CD ^{[1
]}

HENNEL, AM ^{[1
]}

BRYSKIEWICZ, T ^{[1
]}

KO, KY ^{[1
]}

PAWLOSICZ, LM ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.342614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3459 / 3469

页数：11

共 73 条

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[2]

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[3]

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[4] NEW SEMIINSULATING INP - TITANIUM MIDGAP DONORS [J].

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[5]

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[6] IDENTIFICATION OF A VANADIUM-RELATED LEVEL IN LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS [J].

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GATOS, HC .

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[7] PROPERTIES OF TITANIUM IN INP [J].

BREMOND, G ;

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[8] DEEP LEVEL SPECTROSCOPY IN INP-FE [J].

BREMOND, G ;

NOUAILHAT, A ;

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[9]

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[10] BULK GAAS CRYSTAL-GROWTH BY LIQUID-PHASE ELECTROEPITAXY [J].

BRYSKIEWICZ, T ;

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GATOS, HC .

JOURNAL OF CRYSTAL GROWTH, 1987, 82 (03) :279-288

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