ELECTRONIC AND OPTICAL-PROPERTIES OF TI-DOPED GAAS AND INP - SEMI-INSULATING INP

被引：29

作者：

BRANDT, CD ^{[1
]}

HENNEL, AM ^{[1
]}

BRYSKIEWICZ, T ^{[1
]}

KO, KY ^{[1
]}

PAWLOSICZ, LM ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.342614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3459 / 3469

页数：11

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