REFLECTION EFFECT OF A LOCALIZED ABSORPTIVE POTENTIAL ON NONRESONANT AND RESONANT TUNNELING

被引:25
作者
RUBIO, A
KUMAR, N
机构
[1] International Centre for Theoretical Physics, 34100 Trieste
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 04期
关键词
D O I
10.1103/PhysRevB.47.2420
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reflection due to absorptive potential (-iV(i)) for resonant and nonresonant tunneling has been considered. We show that the effect of reflection leads to a nonmonotonic dependence of absorption on the strength V(i) with a maximum absorption of typically 0.5. This has implications for the operation of resonant-tunneling devices. General conceptual aspects of absorptive potentials are discussed.
引用
收藏
页码:2420 / 2422
页数:3
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