PULSED-LASER ANNEALING OF P-IMPLANTED DIAMOND

被引：25

作者：

ALLEN, MG

PRAWER, S

JAMIESON, DN

KALISH, R

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-31096 HAIFA,ISRAEL

[2] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,IL-31096 HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 15期

关键词：

D O I：

10.1063/1.110592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond deeply implanted with 4 MeV P ions to a dose of 1 x 10(15)/cm2 is annealed by a focused pulsed laser that is selectively absorbed by the implanted damaged layer. Laser treatment with multiple pulses at ever increasing power leads to excellent regrowth as measured by channeling Rutherford backscattering spectroscopy, surface profilometry, and by optical transmission. The importance of the deep implantation and the potential of this method for doping diamond is demonstrated.

引用

页码：2062 / 2064

页数：3

共 6 条

[1] APPLICATIONS OF MEV ION MICROBEAMS TO THE ANALYSIS OF SINGLE-CRYSTAL MATERIALS [J].