RESIDUAL DEFECT CONTROL WHEN DOPING THIN-LAYERS IN DIAMOND

Doping of a diamond layer by boron ion implantation has been conclusively demonstrated and reported in the literature. To reach this objective, implantation is done at low target temperatures (typically liquid nitrogen) followed by rapid annealing; the so-called CIRA method. The object of the exercise is to activate the implanted atoms by dopant atom-vacancy combinations, and to decrease the residual damage by means of self-interstitial-vacancy recombinations. This paper is part of an ongoing study on the effects that the implantation-annealing parameters have on the doping process. It is known that in order to improve the activation ratio, the initial implanted radiation damage has to be increased. However, this causes a higher residual damage after annealing. It is therefore proposed and theoretical arguments as well as preliminary experimental data are advanced to show that another route to control the CIRA doping process may be achieved by multiple, low-dose, implantation-annealing sequences.