A FULLY ANALYTICAL AC LARGE-SIGNAL MODEL OF THE GAAS-MESFET FOR NONLINEAR NETWORK ANALYSIS AND DESIGN

被引：9

作者：

MADJAR, A

机构：

[1] RAFAEL, Haifa, Isr, RAFAEL, Haifa, Isr

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1988年 / 36卷 / 01期

关键词：

AMPLIFIERS; POWER TYPE - ELECTRIC NETWORKS; NONLINEAR - Analysis - ELECTRONIC CIRCUITS; MIXER - MATHEMATICAL TECHNIQUES - Curve Fitting - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1109/22.3482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully analytical version of an AC large-signal model for the GaAs MESFET is presented. The source model is based on basic principles and the actual physics and geometry of the device. The analytical version was developed by curve fitting the analytical expressions to the source model. The accuracy of the model is demonstrated using simulation examples of a power amplifier and a mixer.

引用

页码：61 / 67

页数：7

共 13 条

[1]

DREIFUSS J, 1985, IEEE T MICROWAVE THE, V33

[2]

FILICORI FL, 1983, IEEE MTT S

[3]

GILMORE R, 1986, IEEE MTT S

[4]

GILMORE RJ, 1984, MTT S