35-KV GAAS SUBNANOSECOND PHOTOCONDUCTIVE SWITCHES

被引：38

作者：

POCHA, MD

DRUCE, RL

机构：

[1] Lawrence Livermore National Laboratory, Livermore, CA, 94550, P.O. Box 808

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 12期

关键词：

D O I：

10.1109/16.64522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoconductive switches are one of the few devices that allow the generation of high-voltage electrical pulses with subnanosecond rise time. We are exploring high-voltage, fast-pulse generation using GaAs photoconductive switches. We have been able to generate 35-kV pulses with rise times as short as 135 ps using 5-mm gap switches and have achieved electric field hold-off of greater than 100 kV/cm. We have also been able to generate an approximately 500-ps FWHM on/off electrical pulse with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier life times. This paper describes our experimental results and discusses fabrication of switches and the diagnostics used to measure these fast signals. We also describe our experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs. © 1990 IEEE

引用

页码：2486 / 2492

页数：7

共 11 条

[1] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J].