NOISE CHARACTERISTICS OF N-CHANNEL DEEP-DEPLETION MODE MOS-TRANSISTORS

被引：8

作者：

CARRUTHERS, C ^{[1
]}

MAVOR, J ^{[1
]}

机构：

[1] UNIV EDINBURGH,DEPT ELECT ENGN,EDINBURGH EH9 3JL,MIDLOTHIAN,SCOTLAND

来源：

IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1992年 / 139卷 / 03期

关键词：

SIGNAL PROCESSING; TRANSISTORS; NOISE AND INTERFERENCE;

D O I：

10.1049/ip-g-2.1992.0061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The potential of deep-depletion MOS transistors for a low-noise, analogue signal-processing application is investigated in this paper. These are predicted to have a favourable noise performance, because a buried depletion layer in this transistor structure can be induced between its conduction channel and the SiO2-Si interface noise mechanisms, which dominate a surface-channel device. Measurements for n-channel depletion-mode MOS transistors formed on p-type [100] orientation silicon substrates are presented. Under certain bias conditions these devices exhibit a significant reduction in the low-frequency noise performance over conventional, surface-channel MOS structures. A BiCMOS cascode buffer circuit is proposed, which yields a favourable noise performance for infra-red, focal-plane signal-processing applications.

引用

页码：377 / 383

页数：7