SILICON WAFER-TO-WAFER BONDING AT T-LESS-THAN-200-DEGREES-C WITH POLYMETHYLMETHACRYLATE

被引：27

作者：

EATON, WP

RISBUD, SH

SMITH, RL

机构：

[1] UNIV CALIF DAVIS,DEPT CHEM ENGN & MAT SCI,DIV MAT SCI & ENGN,DAVIS,CA 95616

[2] UNIV CALIF DAVIS,DEPT ELECT & COMP ENGN,DAVIS,CA 95616

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.112326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A versatile method for low temperature (T< 200-degrees-C) bonding of silicon and oxidized silicon wafers is reported using spun cast films of polymethylmethacrylate (PMMA) as the bonding material. The PMMA films are thermoplastic, transparent, dielectric, planarizing, and photopatternable. Bonding was achieved with both unpatterned and patterned, 1-mum-thick films. Tensile bond strengths of 3.12 MPa were typical (although the strongest bond had a strength of 5.85 MPa) and thin film stresses of 10 MPa (tensile) were measured. Photopatterned PMMA films exhibited approximately 14% lateral pattern smear after bonding.

引用

页码：439 / 441

页数：3

共 9 条

[1]

BARTLETT K, 1983, P SOC PHOTO-OPT INST, V394, P49, DOI 10.1117/12.935121

[2] ON THE ATTAINMENT OF OPTIMUM DEVELOPER PARAMETERS FOR PMMA RESIST [J].