GROWTH OF GA1-XALXSB AND GA1-XINXSB BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：31

作者：

BOUGNOT, GJ

FOUCARAN, AF

MARJAN, M

ETIENNE, D

BOUGNOT, J

DELANNOY, FMH

ROUMANILLE, FM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90330-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：400 / 407

页数：8

共 14 条

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