A WIDE-RANGE VARIABLE-FREQUENCY GUNN OSCILLATOR

被引：10

作者：

HAYDL, WH

机构：

来源：

关键词：

D O I：

10.1063/1.1651852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：357 / &

共 7 条

[1]

CAPELAND JA, 1966, J APPL PHYS, V37, P3602

[2]

CARROLL JE, 1966, ELECTRON LETT, V2, P141

[3] EFFECT OF DOMAIN AND CIRCUIT PROPERTIES ON OSCILLATIONS IN GAAS [J].

GUNN, JB .

[4] NEGATIVE CONDUCTANCE IN SEMICONDUCTORS [J].

KROEMER, H .

KUROKAWA, K .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (10) :2235-+

[6]

MCCUMBER DE, 1966, IEEE T ELECTRON DEV, VED13, P4

[7] A VOLTAGE TUNABLE GUNN-EFFECT OSCILLATOR [J].

SHOJI, M .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01) :130-+