STRESS IN THIN FILMS OF SILANE VAPOR-DEPOSITED SILICON DIOXIDE

[1] BLACKBURN H, 1961, 1961 VAC S T, P943

[2] CAMPBELL DS, 1963, 1962 VAC S T, P29

[3] DAVIDENKOV NN, 1961, SOV PHYS-SOL STATE, V2, P2595

[4] EVITTS HC, 1968, AF3365711268 CONTR

[5] DETERMINATION OF STRESS IN FILMS ON SINGLE CRYSTALLINE SILICON SUBSTRATES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (01) : 7 - +

[6] GOLDSMITH N, 1967, RCA REV, V28, P153

[7] HAMMOND ML, 1968, T METALL SOC AIME, V242, P546

[8] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2429 - +

[9] THE ORIGIN OF STRESS IN METAL LAYERS CONDENSED FROM THE VAPOUR IN HIGH VACUUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (407): : 905 - 910

[1] BLACKBURN H, 1961, 1961 VAC S T, P943

[2] CAMPBELL DS, 1963, 1962 VAC S T, P29

[3] DAVIDENKOV NN, 1961, SOV PHYS-SOL STATE, V2, P2595

[4] EVITTS HC, 1968, AF3365711268 CONTR

[5] DETERMINATION OF STRESS IN FILMS ON SINGLE CRYSTALLINE SILICON SUBSTRATES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (01) : 7 - +

[6] GOLDSMITH N, 1967, RCA REV, V28, P153

[7] HAMMOND ML, 1968, T METALL SOC AIME, V242, P546

[8] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2429 - +

[9] THE ORIGIN OF STRESS IN METAL LAYERS CONDENSED FROM THE VAPOUR IN HIGH VACUUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (407): : 905 - 910