BALLISTIC TRANSPORT IN A SEMICONDUCTOR WITH COLLISIONS

被引：39

作者：

SHUR, MS

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 10期

关键词：

D O I：

10.1109/T-ED.1981.20499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1120 / 1130

页数：11

共 17 条

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[2]

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[3]

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[4]

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MAJERFELD, A ;

FAWCETT, W .

ELECTRONICS LETTERS, 1977, 13 (08) :235-236

[6]

KRATZER SG, 1978, THESIS CORNELL U ITH

[7] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS [J].

MALONEY, TJ ;

FREY, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) :357-358

[8]

MALONEY TJ, 1976, THESIS CORNELL U ITH

[9]

MOTT NF, 1940, ELECTRONIC PROCESS I

[10] LOW-TEMPERATURE FET FOR LOW-POWER HIGH-SPEED LOGIC [J].

REES, H ;

SANGHERA, GS ;

WARRINER, RA .

ELECTRONICS LETTERS, 1977, 13 (06) :156-158

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