DIFFUSION BEHAVIOR OF POINT-DEFECTS IN SI CRYSTAL DURING MELT GROWTH .4. NUMERICAL-ANALYSIS

被引：29

作者：

HABU, R

IWASAKI, T

HARADA, H

TOMIURA, A

机构：

[1] NIPPON STEEL CORP LTD,ELECTR RES LABS,TECH DEV BUR,YAMAGUCHI 743,JAPAN

[2] NSC ELECTRON CORP,DEPT MFG,CRYSTAL GROWTH TECH GRP,YAMAGUCHI 743,JAPAN

[3] NIPPON STEEL CORP LTD,TECH DEV BUR,FUTTSU,CHIBA 29912,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 3A期

关键词：

SILICON; SINGLE CRYSTAL; INTRINSIC POINT DEFECTS; INTERSTITIALS; VACANCIES; DIFFUSION; PAIR ANNIHILATION; GROWN-IN CRYSTAL DEFECTS;

D O I：

10.1143/JJAP.33.1234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes a numerical analysis technique for the solution of the phenomenological diffusion equations of point defects in silicon single crystals during melt growth. The calculation, which, assumes an entropy barrier against the pair annihilation reaction between point defects (self-interstitials and vacancies), gives a distribution of point defects which closely agrees with the distribution of grown-in crystal defects observed in CZ-crystals.

引用

页码：1234 / 1242

页数：9

共 24 条

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