OCCUPIED AND UNOCCUPIED ELECTRONIC STATES IN SIO2 AS MEASURED BY DIRECT AND INVERSE PHOTOEMISSION AND SOFT-X-RAY EMISSION

被引：14

作者：

AZIZAN, M

BAPTIST, R

BRENAC, A

CHAUVET, G

TAN, TAN

机构：

[1] CEN,CEA,IRDI,ELECT & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE

[2] CEN,PSC,SERV PHYS,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL DE PHYSIQUE | 1987年 / 48卷 / 01期

关键词：

D O I：

10.1051/jphys:0198700480108100

中图分类号：

学科分类号：

摘要：

引用

页码：81 / 91

页数：11

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