THEORY OF AMORPHOUS SIO2 AND SIOX .3. ELECTRONIC-STRUCTURES OF SIOX

被引：63

作者：

CHING, WY

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.26.6633

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6633 / 6642

页数：10

共 36 条

[1] ELECTRON-ENERGY LOSS SPECTROSCOPY STUDIES OF THE SI-SIO2 INTERFACE [J].

ADACHI, T ;

HELMS, CR .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :199-201

[2] STUDY OF SILICON-OXYGEN INTERACTION WITH STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS) [J].

BENNINGHOVEN, A ;

STORP, S .

APPLIED PHYSICS LETTERS, 1973, 22 (04) :170-171

[3] PHOTO-LUMINESCENCE IN THE AMORPHOUS SYSTEM SIOX [J].

CARIUS, R ;

FISCHER, R ;

HOLZENKAMPFER, E ;

STUKE, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4241-4243

[4] OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA [J].

CHANG, CC ;

BOULIN, DM .

SURFACE SCIENCE, 1977, 69 (02) :385-402

[5] MICROSCOPIC CALCULATION OF LOCALIZED ELECTRON-STATES IN AN INTRINSIC GLASS [J].

CHING, WY .

PHYSICAL REVIEW LETTERS, 1981, 46 (09) :607-610

[6] THEORY OF AMORPHOUS SIO2 AND SIOX .2. ELECTRON-STATES IN AN INTRINSIC GLASS [J].

CHING, WY .

PHYSICAL REVIEW B, 1982, 26 (12) :6622-6632

[7] THEORY OF AMORPHOUS SIO2 AND SIOX .3. ELECTRONIC-STRUCTURES OF SIOX [J].

CHING, WY .

PHYSICAL REVIEW B, 1982, 26 (12) :6633-6642

[8] OPTICAL DIELECTRIC FUNCTION OF INTRINSIC AMORPHOUS SILICON [J].

CHING, WY ;

LIN, CC .

PHYSICAL REVIEW B, 1978, 18 (12) :6829-6833

[9] FIELD-DEPENDENT INTERNAL PHOTOEMISSION PROBE OF ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACE [J].

DISTEFANO, TH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :856-859

[10]

ENGELKE R, 1980, PHYS STATUS SOLIDI A, P271

← 1 2 3 4 →