AN EBERS-MOLL MODEL FOR THE HETEROSTRUCTURE BIPOLAR-TRANSISTOR

被引：57

作者：

LUNDSTROM, MS

机构：

[1] Purdue Univ, West Lafayette, IN, USA, Purdue Univ, West Lafayette, IN, USA

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 11期

关键词：

D O I：

10.1016/0038-1101(86)90061-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1173 / 1179

页数：7

共 19 条

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[4]

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[8] 2 INTEGRAL RELATIONS PERTAINING TO THE ELECTRON-TRANSPORT THROUGH A BIPOLAR-TRANSISTOR WITH A NONUNIFORM ENERGY-GAP IN THE BASE REGION [J].

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[9] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

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[10] RING OSCILLATOR CIRCUIT SIMULATION WITH PHYSICAL MODEL FOR GAAS/GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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