MODIFIED 1.3 MU-M BURIED RIDGE STRIPE LASER FOR IMPLANTED-FET INTEGRATION

被引：3

作者：

DELORME, F

KAZMIERSKI, C

DEVOLDERE, P

BOULEY, JC

机构：

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1990年 / 137卷 / 01期

关键词：

D O I：

10.1049/ip-j.1990.0009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The buried-ridge stripe (BRS) laser has been modified for integration purposes. Adapting the laser to a quasi-planar configuration on the semi-insulating substrate, we report on an important improvement of the integrable BRS laser characteristics as compared with previously published ones. Also, the technology for this modified structure is shown to be compatible with the implanted transistor technology. No significant effect on the laser characteristics has been seen after Si implantation and subsequent heat treatment at 850°C for 10 s. A threshold current as low as 9.5 mA and an optical bandwidth of 6.1 GHz have been obtained in the case of Si implantation carried out after laser fabrication.

引用

页码：39 / 42

页数：4

共 10 条

[1]

BOUADMA N, 1989, LOW THRESHOLD CURREN, P168

[2]

BOULEY JC, 1984, 9TH IEEE INT SEM C

[3]

BRILLOUET F, 1986, P EUROPEAN MATERIAL, P403

[4] EXTREMELY LOW THRESHOLD OPERATION OF 1.5-MU-M GAINASP-INP BURIED RIDGE STRIPE LASERS [J].