TEMPERATURE-DEPENDENT MOBILITY OF A GAAS/ALGAAS HETEROSTRUCTURE AFTER DEPOSITION OF MGO AND SUPERCONDUCTING YBA2CU3O7-X

被引：10

作者：

TSENG, MZ ^{[1
]}

NGUYEN, C ^{[1
]}

TARSA, E ^{[1
]}

CHANG, LD ^{[1
]}

HU, EL ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.107849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality YBa2Cu3O7-x films have been grown on MgO epitaxial buffer layers deposited onto a GaAs/AlGaAs heterostructure incorporating a two-dimensional electron gas (2DEG). The critical temperature of the YBa2Cu3O7-x, T(c)(0) was > 80 K, and J(c) > 2 X 10(4) A/cm2 at 77 K. Electron mobilities and concentrations of 2DEG substrates were measured at different stages in the formation of YBa2Cu3O7-x/MgO/2DEG structure. Room-temperature mobilities and concentrations were unchanged after YBa2Cu3O7-x/MgO deposition, while low-temperature mobilities were slightly degraded. It is found that the degradation of electron mobility is correlated to the high growth temperature of YBa2Cu3O7-x. Since the 2DEG is only 1200 angstrom from the substrate surface, this constitutes a sensitive demonstration of the viability of the semiconductor substrate under these growth conditions.

引用

页码：601 / 603

页数：3

共 6 条

[1] EPITAXIAL MGO BUFFER LAYERS FOR YBA2CU3O7-X THIN-FILM ON GAAS [J].

CHANG, LD ;

TSENG, MZ ;

HU, EL ;

FORK, DK .

APPLIED PHYSICS LETTERS, 1992, 60 (14) :1753-1755

[2] INSITU YBA2CU3O7-X SUPERCONDUCTOR FILMS ON GAAS/ALAS SUPERLATTICES [J].

CHANG, LD ;

TSENG, MZ ;

SAMOSKA, LA ;

OSHEA, JJ ;

LI, YJ ;

CAINE, EJ ;

HU, EL ;

PETROFF, PM ;

KROEMER, H .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) :5108-5110

[3] EPITAXIAL YBA2CU3O7-DELTA ON GAAS(001) USING BUFFER LAYERS [J].

FORK, DK ;

NASHIMOTO, K ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1992, 60 (13) :1621-1623

[4] THE EFFECT OF GROWTH TEMPERATURE ON THE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].

HIYAMIZU, S ;

FUJII, T ;

MIMURA, T ;

NANBU, K ;

SAITO, J ;

HASHIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) :L455-L458

[5] THE EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF SELECTIVELY DOPED GAAS/N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE [J].

ISHIKAWA, T ;

HIYAMIZU, S ;

MIMURA, T ;

SAITO, J ;

HASHIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L814-L816

[6]

Tseng M. R., UNPUB

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