RESONANT-CAVITY GAAS/INGAAS/ALAS PHOTODIODES WITH A PERIODIC ABSORBER STRUCTURE

被引：19

作者：

HUANG, FY

SALVADOR, A

GUI, X

TERAGUCHI, N

MORKOC, H

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.110379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resonant-cavity photodiodes with a periodic absorber structure are demonstrated. The photodiode consists of three thin InGaAs absorbing layers located at the antinodes of standing wave optical field in a resonant cavity. The bottom mirror of the resonant cavity is formed by a GaAs/AlAs quarter-wave stack, while the top mirror is formed by the GaAs/air interface. Theoretical estimation based on the standing wave effect gives 70% peak quantum efficiency at the resonant wavelength. The peak quantum efficiency of this photodiode. as measured by a calibrated Si photodetector, enhanced by 30% as compared to a conventional resonant-cavity photodiode with a single absorbing layer of the same overall thickness. The observed enhancement in quantum efficiency is consistent with theory.

引用

页码：141 / 143

页数：3

共 11 条

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