TEMPERATURE PROBLEMS WITH RAPID THERMAL-PROCESSING FOR VLSI APPLICATIONS

被引：10

作者：

KAKOSCHKE, R

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90292-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：753 / 759

页数：7

共 9 条

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[4]

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[6] THERMAL AND PLASMA-WAVE DEPTH PROFILING IN SILICON [J].

OPSAL, J ;

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[7] DETECTION OF THERMAL WAVES THROUGH OPTICAL REFLECTANCE [J].

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[8]

Sheets R. E., 1986, Rapid Thermal Processing, P191

[9]

WURM S, UNPUB APPL PHYS

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