UNIFORMITY CHARACTERIZATION OF AN RTP SYSTEM

被引：3

作者：

GELPEY, JC

STUMP, PO

BLAKE, J

MICHEL, A

RAUSCH, W

机构：

[1] IBM CORP,DIV GEN TECHNOL,E FISHKILL,NY 12533

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90921-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：612 / 617

页数：6

共 8 条

[1]

Cohen S. A., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P321

[2]

Gelpey J. C., 1986, Rapid Thermal Processing, P199

[3]

Hoyt J. L., 1986, Rapid Thermal Processing, P15

[4]

LEVER RF, COMMUNICATION

[5]

Michel A. E., 1986, Rapid Thermal Processing, P3

[6] INVESTIGATION OF TRANSIENT DIFFUSION EFFECTS IN RAPID THERMALLY PROCESSED ION-IMPLANTED ARSENIC IN SILICON [J].

SEDGWICK, TO ;

MICHEL, AE ;

COHEN, SA ;

DELINE, VR ;

OEHRLEIN, GS .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :848-850

[7]

Sheets R. E., 1986, Rapid Thermal Processing, P191

[8] SHALLOW JUNCTIONS BY HIGH-DOSE AS IMPLANTS IN SI - EXPERIMENTS AND MODELING [J].

TSAI, MY ;

MOREHEAD, FF ;

BAGLIN, JEE ;

MICHEL, AE .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3230-3235

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