INVESTIGATION OF TRANSIENT DIFFUSION EFFECTS IN RAPID THERMALLY PROCESSED ION-IMPLANTED ARSENIC IN SILICON

被引：23

作者：

SEDGWICK, TO

MICHEL, AE

COHEN, SA

DELINE, VR

OEHRLEIN, GS

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.96423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：848 / 850

页数：3

共 15 条

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[2]

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[3]

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[4] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].

FAIR, RB ;

WORTMAN, JJ ;

LIU, J .

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[5]

HODGSON RT, 1984, MATER RES SOC S P, V23, P253

[6]

HODGSON RT, 1983, LASER SOLID INTERACT, V13, P355

[7] TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON [J].

KALISH, R ;

SEDGWICK, TO ;

MADER, S ;

SHATAS, S .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :107-109

[8] EFFECT OF FURNACE PREANNEAL AND RAPID THERMAL ANNEALING ON ARSENIC-IMPLANTED SILICON [J].

KWOR, R ;

KWONG, DL ;

HO, CC ;

TSAUR, BY ;

BAUMANN, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1201-1206

[9]

MICHEL AE, UNPUB

[10]

NARAYAN J, 1983, MATERIALS RES SOC 4, V13, P337

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