EFFECT OF FURNACE PREANNEAL AND RAPID THERMAL ANNEALING ON ARSENIC-IMPLANTED SILICON

被引：11

作者：

KWOR, R

KWONG, DL

HO, CC

TSAUR, BY

BAUMANN, S

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[2] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 05期

关键词：

D O I：

10.1149/1.2114059

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1201 / 1206

页数：6

共 7 条

[1] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].

FAIR, RB ;

WORTMAN, JJ ;

LIU, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394

[2]

FELDMAN LC, 1982, MAT ANAL ION CHANNEL, P59

[3]

HODGSON RT, 1983, LASER SOLID INTERACT, V13, P355

[4] TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON [J].

KALISH, R ;

SEDGWICK, TO ;

MADER, S ;

SHATAS, S .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :107-109

[5]

SEIDEL TE, 1984, NOV MAT RES SOC BOST

[6] PHOTOLUMINESCENCE FROM RAPID THERMAL ANNEALED AND PULSED-LASER-ANNEALED, ION-IMPLANTED SI [J].

WAGNER, J ;

GELPEY, JC ;

HODGSON, RT .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :47-49

[7] RAPID ISOTHERMAL ANNEALING OF AS-IMPLANTED, P-IMPLANTED, AND B-IMPLANTED SILICON [J].

WILSON, SR ;

PAULSON, WM ;

GREGORY, RB ;

HAMDI, AH ;

MCDANIEL, FD .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) :4162-4170

← 1 →