GROWTH OF A 2-DIMENSIONAL ER SILICIDE ON SI(111)

被引：49

作者：

PAKI, P

KAFADER, U

WETZEL, P

PIRRI, C

PERUCHETTI, JC

BOLMONT, D

GEWINNER, G

机构：

[1] Laboratoire De Physique Et De Spectroscopie Electronique, Faculte Des Sciences Et Techniques, 68093 Mulhouse Cedex

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.45.8490

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Initial stages of ErSi1.7, formation on Si(111) surfaces were investigated by means of low-energy electron diffraction, angle-resolved ultraviolet photoemission spectroscopy, and x-ray-photoelectron forward-scattering techniques. Experimental data are presented that demonstrate the formation of a p (1 X 1) ordered-surface silicide by deposition of one Er monolayer onto Si(111) held at room temperature and subsequently annealed at 550-degrees-C. The structure of this two-dimensional compound appears to be similar to a single ErSi2 layer (AlB2 structure) with a reconstructed Si top layer.

引用

页码：8490 / 8493

页数：4

共 13 条

[1] SURFACE CRYSTALLOGRAPHY OF YSI2-X FILMS EPITAXIALLY GROWN ON SI(111) - AN X-RAY PHOTOELECTRON DIFFRACTION STUDY [J].

BAPTIST, R ;

FERRER, S ;

GRENET, G ;

POON, HC .

PHYSICAL REVIEW LETTERS, 1990, 64 (03) :311-314

[2] HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF THE ERSI2/SI(111) INTERFACE [J].

DANTERROCHES, C ;

PERRET, P ;

DAVITAYA, FA ;

CHROBOCZEK, JA .

THIN SOLID FILMS, 1990, 184 :349-356

[3] FABRICATION AND STRUCTURE OF EPITAXIAL ER SILICIDE FILMS ON (111) SI [J].

DAVITAYA, FA ;

PERIO, A ;

OBERLIN, JC ;

CAMPIDELLI, Y ;

CHROBOCZEK, JA .

APPLIED PHYSICS LETTERS, 1989, 54 (22) :2198-2200

[4]

EGELHOFF WF, 1990, SOLID STATE MATER SC, V16, P313

[5] ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

FADLEY, CS .

PROGRESS IN SURFACE SCIENCE, 1984, 16 (03) :275-388

[6] SURFACE CORE LEVEL SHIFTS OF THE LANTHANIDE METALS CE-58-LU-71 - A COMPREHENSIVE EXPERIMENTAL-STUDY [J].

GERKEN, F ;

FLODSTROM, AS ;

BARTH, J ;

JOHANSSON, LI ;

KUNZ, C .

PHYSICA SCRIPTA, 1985, 32 (01) :43-57

[7] QUANTIZED HOLE STATES DETECTED BY PHOTOEMISSION IN ULTRATHIN EPITAXIAL COSI2 FILMS ON SI(111) [J].

HADERBACHE, L ;

WETZEL, P ;

PIRRI, C ;

PERUCHETTI, JC ;

BOLMONT, D ;

GEWINNER, G .

PHYSICAL REVIEW B, 1989, 39 (02) :1422-1425

[8]

KNAPP JA, 1986, MATER RES SOC S P, V54, P261

[9]

NOORDE H, 1981, APPL PHYS LETT, V38, P865

[10] FORMATION OF EPITAXIAL YTTRIUM AND ERBIUM SILICIDE ON SI(111) IN ULTRAHIGH-VACUUM [J].

SIEGAL, MP ;

KAATZ, FH ;

GRAHAM, WR ;

SANTIAGO, JJ ;

VANDERSPIEGEL, J .

APPLIED SURFACE SCIENCE, 1989, 38 (1-4) :162-170

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