MOVPE OF ALXGA1-XAS ALLOYS ABOVE 850-DEGREES-C

被引：2

作者：

BASMAJI, P

LEYCURAS, A

LEYMARIE, J

GIBART, P

GAUTHIER, D

PORTAL, JC

GIL, B

机构：

[1] CNRS,SERV NATL DES CHAMPS INTENSES,F-38042 GRENOBLE,FRANCE

[2] CNRS,INST NATL SCI APPL,F-31077 TOULOUSE,FRANCE

[3] UNIV MONTPELLIER 2,ETUD SEMICOND GRP,F-34060 MONTPELLIER,FRANCE

来源：

关键词：

D O I：

10.1016/0022-0248(88)90510-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：83 / 87

页数：5

共 7 条

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[2] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS
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[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-PURITY ALGAAS
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[4] LONG-RANGE ORDER IN ALXGA1-XAS
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[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (03) : 201 - 204
[5] PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS
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MOONEY, PM
POTEMSKI, R
BRADLEY, J
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 632 - 643
[6] MISDAQ MA, 1986, NUCL INSTRUM METH B, V15, P328, DOI 10.1016/0168-583X(86)90313-7
[7] SCHUBERT E, 1984, PHYS REV B, V39, P7021