COMPARATIVE-ANALYSIS OF THE OPTICAL-QUALITY OF SINGLE IN0.1GA0.9AS/AL0.33GA0.67AS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) AND (311) GAAS SUBSTRATES

被引：12

作者：

BRANDT, O

KANAMOTO, K

TSUGAMI, M

ISU, T

TSUKADA, N

机构：

[1] MITSUBISHI ELECTR CORP,SEMICOND RES LAB,AMAGASAKI,HYOGO 661,JAPAN

[2] MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICES LAB,ITAMI,HYOGO 664,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期

关键词：

D O I：

10.1063/1.114365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the room-temperature photoluminescence of single In0.1Ga0.9As/Al0.33Ga0.67As quantum wells grown simultaneously on (100), (311)A, and (311)B GaAs substrates. The measurements, taken under both steady state and transient conditions, evidence that nonradiative (Shockley-Read-Hall) recombination dominates the emission of both the [100] and [311]B oriented samples at low injection levels, and is still important up to injection levels approaching those in lasers. The emission of the [311]A oriented sample is, in contrast, dominated by radiative recombination already at modest injection levels. The origin of this remarkable feature of the [311]A oriented sample is traced back to the reduced incorporation of deep recombination centers at the (311)A In0.1Ga0.9As/Al0.33Ga0.67As interface. (C) 1995 American Institute of Physics.

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页码：1885 / 1887

页数：3

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