THE INFLUENCE OF A HF AND AN ANNEALING TREATMENT ON THE BARRIER HEIGHT OF P-TYPE AND N-TYPE SI MIS STRUCTURES

被引:57
作者
HANSELAER, PL
LAFLERE, WH
VANMEIRHAEGHE, RL
CARDON, F
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 02期
关键词
D O I
10.1007/BF00616830
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:129 / 133
页数:5
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共 27 条
[11]   MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].
GREEN, MA ;
KING, FD ;
SHEWCHUN, J .
SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561
[12]  
Grove A. S., 1967, PHYS TECHNOL S, P280
[13]   CURRENT-VOLTAGE CHARACTERISTIC OF TI-PSI METAL-OXIDE-SEMICONDUCTOR DIODES [J].
HANSELAER, PL ;
LAFLERE, WH ;
VANMEIRHAEGHE, RL ;
CARDON, F .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2309-2314
[14]   AN EXPERIMENTAL-STUDY OF TI-PSI MIS TYPE SCHOTTKY BARRIERS [J].
HANSELAER, PL ;
LAFLERE, WH ;
VANMEIRHAEGHE, RL ;
CARDON, F .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (02) :L7-L10
[15]   DIPOLE LAYERS AT THE METAL-SIO2 INTERFACE [J].
HICKMOTT, TW .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4269-4281
[16]  
Kar S., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P922
[17]   THE STRUCTURE OF ULTRATHIN OXIDE ON SILICON [J].
KRIVANEK, OL ;
MAZUR, JH .
APPLIED PHYSICS LETTERS, 1980, 37 (04) :392-394
[18]   MEASUREMENT OF RETENTION OF FLUORIDE BY SILICON AND SILICON DIOXIDE SURFACES [J].
LARRABEE, GB ;
HEINEN, KG ;
HARRELL, SA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :867-&
[19]   ELECTRICAL-PROPERTIES OF SI-SIO2 INTERFACE AND ITS INFLUENCE ON DEVICE PERFORMANCE AND STABILITY [J].
NICOLLIAN, EH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1112-1121
[20]  
Ponpon J. P., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P900