PROPERTIES INVESTIGATION OF THIN SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION

被引:15
作者
KOMAROV, FF
ROGALEVICH, IA
TISHKOV, VS
机构
[1] Inst. Appl. Phys. Probl., Byelorussian State Univ., Minsk, Belarus
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 39卷 / 3-4期
关键词
Compendex;
D O I
10.1080/00337577808234470
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
SILICON AND ALLOYS
引用
收藏
页码:163 / 167
页数:5
相关论文
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