PROPERTIES INVESTIGATION OF THIN SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION

被引：15

作者：

KOMAROV, FF

ROGALEVICH, IA

TISHKOV, VS

机构：

[1] Inst. Appl. Phys. Probl., Byelorussian State Univ., Minsk, Belarus

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 39卷 / 3-4期

关键词：

Compendex;

D O I：

10.1080/00337577808234470

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

SILICON AND ALLOYS

引用

页码：163 / 167

页数：5

共 15 条

[1]

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[2]

Astakhov V. P., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2128

[3]

ATAMANENKO VT, 1974, METHODS MINIMIZATION, P23

[4]

BORDERS JA, 1971, 1971 P INT C ION IMP, P241

[5] EPITAXIAL SILICON LAYERS GROWN ON ION-IMPLANTED SILICON-NITRIDE LAYERS [J].

DEXTER, RJ ;

PICRAUX, ST ;

WATELSKI, SB .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :455-457

[6] FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION [J].

EDELMAN, FL ;

KUZNETSOV, ON ;

LEZHEIKO, LV ;

LUBOPYTOVA, EV .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01) :13-15

[7] CRYSTAL STRUCTURES OF SILICON NITRIDE [J].

HARDIE, D ;

JACK, KH .

NATURE, 1957, 180 (4581) :332-333

[8]

HARDIE D, 1957, NATURE, V180

[9]

KRUZE TA, 1972, PHYSICAL GROUNDS ION, P173

[10]

Mayer J. W., 1970, ION IMPLANTATION SEM

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