MECHANISMS FOR THE OXIDATION OF SILICON AND THE FORMATION OF CHARGED DEFECTS

被引：42

作者：

MOTT, N

机构：

来源：

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1981年 / 376卷 / 1765期

关键词：

D O I：

10.1098/rspa.1981.0088

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The Deal-Grove model for the thermal and anodic oxidation of silicon is examined. Dioxide dissolves in the oxide layer and diffuses through it. A distinction is made between interstitial sites, through which the molecule diffuses, and special low energy sites which determine the solubility. The latter are not relevant to the rate of oxidation. A discussion is given of the nature of charged centers in the oxide layer, which are thought to be responsible for Anderson localization in the inversion layer.

引用

页码：207 / 215

页数：9

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