MECHANISMS FOR THE OXIDATION OF SILICON AND THE FORMATION OF CHARGED DEFECTS

被引:42
作者
MOTT, N
机构
关键词
D O I
10.1098/rspa.1981.0088
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The Deal-Grove model for the thermal and anodic oxidation of silicon is examined. Dioxide dissolves in the oxide layer and diffuses through it. A distinction is made between interstitial sites, through which the molecule diffuses, and special low energy sites which determine the solubility. The latter are not relevant to the rate of oxidation. A discussion is given of the nature of charged centers in the oxide layer, which are thought to be responsible for Anderson localization in the inversion layer.
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页码:207 / 215
页数:9
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