BARRIER FORMATION IN GRADED HG1-XCDXTE HETEROJUNCTIONS

被引：17

作者：

MADARASZ, FL

SZMULOWICZ, F

机构：

[1] TELEDYNE BROWN ENGN,HUNTSVILLE,AL 35807

[2] UNIV DAYTON,RES INST,DAYTON,OH 45469

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3267 / 3277

页数：11

共 30 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] POTENTIAL BARRIERS IN HGCDTE HETEROJUNCTIONS [J].

BRATT, PR ;

CASSELMAN, TN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :238-245

[3] THE STATISTICS OF DIVALENT IMPURITY CENTRES IN A SEMICONDUCTOR [J].

CHAMPNESS, CH .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (12) :1335-1339

[4] RESONANT LEVEL IN SEMICONDUCTING HG1-XCDXTE [J].

DORNHAUS, R ;

NIMTZ, G ;

SCHLABITZ, W ;

BURKHARD, H .

SOLID STATE COMMUNICATIONS, 1975, 17 (07) :837-841

[5]

DORNHAUS R, 1978, SPRINGER TRACTS MODE, V78, P8

[6]

ESCH R, COMMUNICATION

[7]

FAURIE JP, 1986, 1986 US WORKSH PHYS

[8] ELECTRICAL-PROPERTIES OF SHALLOW LEVELS IN P-TYPE HGCDTE [J].

FINKMAN, E ;

NEMIROVSKY, Y .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1205-1211

[9]

GRAHAM ED, 1970, THESIS N CAROLINA ST, P40

[10]

GRAHAM ED, 1970, THESIS N CAROLINA ST

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