NUMERICAL-ANALYSIS OF ANOMALOUS DOPING PROFILES OF PHOSPHORUS IN SILICON

被引：2

作者：

ARANDJELOVIC, V

MILJKOVIC, L

TJAPKIN, D

机构：

[1] UNIV BELGRADE, BELGRADE, YUGOSLAVIA

[2] UNIV NIS, NIS, YUGOSLAVIA

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 04期

关键词：

D O I：

10.1016/0038-1101(79)90086-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mathematical model of diffusion based on the general theory of diffusion via the vacancy mechanism has been simplified in that the vacancy distribution is approximated by its quasi-equilibrium relation. An improvement introduced into the model to improve its accuracy at very high impurity concentrations gave an increase of the calculated junction depths significant compared to the metallurgical basewidths of modern high frequency transistors. A good fit to the available experimental data has been obtained. © 1979.

引用

页码：355 / 359

页数：5

共 10 条

[1] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS [J].