PICOSECOND SWITCHING OF A MULTI-KILOVOLT DC BIAS WITH LASER ACTIVATED SILICON AT LOW-TEMPERATURE

被引：11

作者：

STAVOLA, M

SCEATS, MG

MOUROU, G

机构：

[1] UNIV ROCHESTER,INST OPT,ROCHESTER,NY 14627

[2] UNIV ROCHESTER,LASER ENERGET LAB,ROCHESTER,NY 14627

来源：

OPTICS COMMUNICATIONS | 1980年 / 34卷 / 03期

关键词：

D O I：

10.1016/0030-4018(80)90404-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：409 / 412

页数：4

共 13 条

[1] ACTIVE PULSE SHAPING IN THE PICOSECOND DOMAIN [J].

AGOSTINELLI, J ;

MOUROU, G ;

GABEL, CW .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :731-733

[2] HIGH-POWER SWITCHING WITH PICOSECOND PRECISION - APPLICATIONS TO HIGH-SPEED KERR CELL AND POCKELS CELL [J].

ANTONETTI, A ;

MALLEY, MM ;

MOUROU, G ;

ORSZAG, A .

OPTICS COMMUNICATIONS, 1977, 23 (03) :435-439

[3] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J].

AUSTON, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :101-103

[4] PROPERTIES OF GOLD IN SILICON [J].

BULLIS, WM .

SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&

[5]

KNOX W, 1979, CLEA12 PAP

[6] PICOSECOND OPTOELECTRONIC SWITCHING IN GAAS [J].

LEE, CH .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :84-86

[7] KILOVOLT PICOSECOND OPTOELECTRONIC SWITCH AND POCKELS CELL [J].

LEFUR, P ;

AUSTON, DH .

APPLIED PHYSICS LETTERS, 1976, 28 (01) :21-23

[8]

MILNES AG, 1973, DEEP IMPURITIES SEMI, P362

[9]

MOTT NF, 1964, ELECTRONIC PROCESSES, P197

[10] HIGH-POWER SWITCHING WITH PICOSECOND PRECISION [J].

MOUROU, G ;

KNOX, W .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :492-495

← 1 2 →