Relaxed Si1-xGex films with reduced dislocation densities grown by molecular beam epitaxy

被引：28

作者：

Tanner, MO ^{[1
]}

Chu, MA ^{[1
]}

Wang, KL ^{[1
]}

Meshkinpour, M ^{[1
]}

Goorsky, MS ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT MAT SCI & ENGN,LOS ANGELES,CA 90095

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00379-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The quality of annealed Si0.86Ge0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO2 layer, which allows strain in the Si0.86Ge0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.

引用

页码：121 / 125

页数：5

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