STRAINED-LAYER INGAAS/GAINASP/GAINP QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：15

作者：

ZHANG, G

机构：

[1] Department of Physics, Tampere University of Technology, SF-33101 Tampere

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 12期

关键词：

D O I：

10.1063/1.108694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the first strained-layer InGaAs/GaInAsP/GaInP separated confinement heterostructure multiple quantum well lasers which emit at a wavelength of 0.98 mum. These lasers, grown by gas-source molecular beam epitaxy, exhibit a low threshold current density of 169 A/cm2 and high characteristic temperatures of 235 K for a cavity length of 1200 mum. The internal waveguide loss and internal quantum efficiency are 5.0 cm-1 and 83%, respectively. Single mode continuous wave operation is found up to an output power of 25 mW per facet at room temperature for an uncoated 5.5 mum X 800 mum ridge waveguide laser.

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页码：1405 / 1407

页数：3

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