LOW-TEMPERATURE SILICON-NITRIDE DEPOSITION USING MICROWAVE-EXCITED ACTIVE NITROGEN

被引：17

作者：

SHIBAGAKI, M

HORIIKE, Y

YAMAZAKI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷

关键词：

D O I：

10.7567/JJAPS.17S1.215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：215 / 221

页数：7

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