MAGNETOTRANSPORT IN NARROW IN0.53GA0.47AS/INP WIRES

被引：13

作者：

MENSCHIG, A

FORCHEL, A

ROOS, B

GERMANN, R

PRESSEL, K

HEURING, W

GRUTZMACHER, D

机构：

[1] UNIV STUTTGART,INST PHYS 4,W-7000 STUTTGART 80,GERMANY

[2] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,W-5100 AACHEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 17期

关键词：

D O I：

10.1063/1.104058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated dry etched In0.53Ga0.47As quantum wires with geometrical widths varying from 80 nm to 50 μm from modulation-doped heterostructures. All wires show finite resistances even at 40 mK without illumination. The magnetotransport measurements show clearly the depopulation of one-dimensional subbands, universal conductance fluctuations, and an anomalous magnetoresistance peak.

引用

页码：1757 / 1759

页数：3

共 13 条

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