SUBSTRATE FLOATING POTENTIAL CHARACTERISTICS IN PLANAR MAGNETRON AND HT SPUTTERING SYSTEMS

被引:16
作者
HOLLAND, L
SAMUEL, G
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D O I
10.1016/S0042-207X(80)80038-8
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:267 / 274
页数:8
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共 8 条
[1]   EFFECT OF SECONDARY ELECTRONS AND NEGATIVE-IONS ON SPUTTERING OF FILMS [J].
HANAK, JJ ;
PELLICANE, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :406-409
[2]   MEAN FREE PATH OF NEGATIVE-IONS IN DIODE SPUTTERING [J].
HARPER, JME ;
CUOMO, JJ ;
GAMBINO, RJ ;
KAUFMAN, HR ;
ROBINSON, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1597-1600
[3]   DESIGN AND OPERATING CHARACTERISTICS OF LOW-PRESSURE PLASMA SYSTEMS [J].
HOLLAND, L .
VACUUM, 1978, 28 (10-1) :437-445
[4]   INFLUENCE OF SPUTTERING AND TRANSPORT MECHANISMS ON TARGET ETCHING AND THIN-FILM GROWTH IN RF SYSTEMS .1. TARGET PROCESSES [J].
HOLLAND, L ;
PRIESTLAND, CR .
VACUUM, 1972, 22 (04) :133-+
[5]  
HOLLAND L, UNPUBLISHED
[6]  
KNAUER W, 1963, 10TH T NATL VAC S BO, P180
[7]  
Knauer W., 1965, U.S. patent, Patent No. [3,216,652, 3216652]
[8]  
VOSSEN JL, 1978, THIN FILM PROCESSES, P55