EFFECT OF ALUMINUM ON AMPHOTERIC BEHAVIOR OF SILICON IN GA1-XALXAS

被引：8

作者：

RADO, WG

CRAWLEY, RL

JOHNSON, WJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 06期

关键词：

D O I：

10.1063/1.1661590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2763 / &

共 9 条

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[3]

ILEGEMS M, 1969, 1968 P S GAAS, P3

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[5] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

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DUNSE, JU ;

NELSON, H ;

HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&

[6] LUMINESCENCE IN INDIRECT BANDGAP ALXGA1-XAS [J].

KRESSEL, H ;

NICOLL, FH ;

HAWRYLO, FZ ;

LOCKWOOD, HF .

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[7] ELECTROLUMINESCENCE CHARACTERISTICS AND EFFICIENCY OF GAAS-SI DIODES [J].

LADANY, I .

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[8] GA-AS-SI TERNARY PHASE SYSTEM [J].

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[9]

ROSZTOCZY FE, 1968, J ELECTROCHEM SOC, V115, pC328

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