DEVELOPMENT OF HIGHLY RELIABLE AL-SI-PD ALLOY INTERCONNECTIONS FOR VLSI

被引：10

作者：

KOUBUCHI, Y

ONUKI, J

FUKADA, S

SUWA, M

机构：

[1] Hitachi Research Laboratory, Hitachi Ltd., 4026, Kuji-cho, Hitachi

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 04期

关键词：

D O I：

10.1109/16.52428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Al-Si-Pd alloy has been developed for improving the reliability of VLSI interconnections. Dry etching characteristics of the Al-Si-Pd alloy in submicrometer patterning proved to be much better than those of the Al-Si-Cu alloy. Both electro-and stress-induced mi-gration resistances of the Al-Si-Pd alloy were at least at the same level as those of the Al-Si-Cu alloy. Furthermore, long-term reliability tests of resin molded 1.3-µm process MOS devices using an Al-Si-Pd alloy interconnection gave satisfactory results. © 1990 IEEE

引用

页码：947 / 951

页数：5

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