EFFECT OF A SILICON-BORON PHASE ON THERMALLY GROWN SILICON OXIDE FILMS

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] BUSEN KM, 1968, ELECTROCHEM TECHNOL, V6, P256

[3] ELLIPSOMETRIC INVESTIGATIONS OF BORON-RICH LAYERS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 291 - +

[4] GHEZZO M, UNPUBLISHED WORK

[5] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 872 - 873

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] BUSEN KM, 1968, ELECTROCHEM TECHNOL, V6, P256

[3] ELLIPSOMETRIC INVESTIGATIONS OF BORON-RICH LAYERS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 291 - +

[4] GHEZZO M, UNPUBLISHED WORK

[5] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 872 - 873