TRANSITION-METAL IMPURITIES IN SILICON - NEW DEFECT REACTIONS

被引：16

作者：

CZAPUTA, R

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 49卷 / 04期

关键词：

D O I：

10.1007/BF00615028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：431 / 436

页数：6

共 18 条

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