LINEAR AND NONLINEAR BEHAVIOR IN THE HIGH-FIELD INSULATING STATE OF DEGENERATELY DOPED N-TYPE GERMANIUM

被引:2
作者
BURNS, MJ [1 ]
MEISEL, MW [1 ]
LI, HL [1 ]
机构
[1] UNIV FLORIDA,CTR ULTRA LOW TEMP RES,GAINESVILLE,FL 32611
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 03期
关键词
NON-CRYSTALLINE SYSTEMS; MAGNETIC-FIELD; INDUCED LOCALIZATION; INVERSION LAYERS; CONDUCTIVITY; HG1-XCDXTE; TRANSITION; DISORDER; GAAS; GE;
D O I
10.1103/PhysRevB.44.1341
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report measurements of the electric-field dependence of the conductivity of degenerately doped n-type Ge in high magnetic fields. At T = 100 mK, the resistivity increases by more than a factor of 1000 in H = 8 T; yet the resistivity remains linear to E > 30 mV/cm. Precision thermometry indicates that the decrease in resistivity with increasing E is an intrinsic property of the high-magnetic-field state. The data are consistent with hopping with some influence from Coulomb interactions, but are not consistent with Wigner crystallization or charged-density waves.
引用
收藏
页码:1341 / 1344
页数:4
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