LINEAR AND NONLINEAR BEHAVIOR IN THE HIGH-FIELD INSULATING STATE OF DEGENERATELY DOPED N-TYPE GERMANIUM

被引：2

作者：

BURNS, MJ ^{[1
]}

MEISEL, MW ^{[1
]}

LI, HL ^{[1
]}

机构：

[1] UNIV FLORIDA,CTR ULTRA LOW TEMP RES,GAINESVILLE,FL 32611

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 03期

关键词：

NON-CRYSTALLINE SYSTEMS; MAGNETIC-FIELD; INDUCED LOCALIZATION; INVERSION LAYERS; CONDUCTIVITY; HG1-XCDXTE; TRANSITION; DISORDER; GAAS; GE;

D O I：

10.1103/PhysRevB.44.1341

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurements of the electric-field dependence of the conductivity of degenerately doped n-type Ge in high magnetic fields. At T = 100 mK, the resistivity increases by more than a factor of 1000 in H = 8 T; yet the resistivity remains linear to E > 30 mV/cm. Precision thermometry indicates that the decrease in resistivity with increasing E is an intrinsic property of the high-magnetic-field state. The data are consistent with hopping with some influence from Coulomb interactions, but are not consistent with Wigner crystallization or charged-density waves.

引用

页码：1341 / 1344

页数：4

共 31 条

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